Parallel Plate Capacitive Plasma Enhanced CVD for Nanowires Growth

• Customization: Available
• After-sales Service: on Site Installation and Online Support
• Warranty: 12 Months
• Model NO.: KS-PECVD-300
• Application: Industry, School, Lab
• Customized: Customized
• Structure: Vertical
• Material: Stainless Steel
• Transport Package: Wooden Package
• Specification: 300*300mm
• Trademark: kunsheng
• Origin: Luoyang City, Henan
• HS Code: 8486202100
• Production Capacity: 500 Sets Per Year

Product Description

PECVD Description:
Introduction:
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a popular thin film deposition process that uses plasma to enhance chemical reactions of vaporized gases. This process is widely utilized in various industries for creating thin, uniform coatings on substrates, such as semiconductors, solar panels, and optical devices.
PECVD is a dry deposition technique, where gases containing reactive species are introduced into a vacuum chamber. The gases react under the influence of plasma, forming solid materials that deposit onto the surface of a substrate. PECVD is known for its ability to deposit films at lower temperatures compared to traditional chemical vapor deposition (CVD), making it ideal for substrates that may be sensitive to high temperatures, such as plastic or thin films.

Features:

1. Low Temperature Deposition: PECVD allows for thin films to be deposited at relatively low temperatures (as low as 100-200°C). This makes it suitable for temperature-sensitive substrates.
2. Uniform Film Thickness: The PECVD process produces highly uniform films with excellent thickness control across large areas, ensuring consistent performance in applications like semiconductor manufacturing and optical coatings.
3. High-Quality Films: PECVD films typically exhibit high purity, high density, and excellent adhesion to substrates. These characteristics are essential in applications requiring high performance, such as in microelectronics and photonics.
4. Versatility: PECVD can deposit a wide variety of materials, including silicon oxide (SiO₂), silicon nitride (Si₃N₄), and other dielectric materials. The process can be tailored to deposit films with specific properties, including optical, electrical, or mechanical characteristics.
5. Controlled Film Properties: Through careful control of process parameters, PECVD can be used to modify the properties of the deposited films, such as refractive index, stress, and thickness, allowing for precise tailoring of material properties for specific applications.

Applications:

1. Semiconductor Industry: PECVD is widely used for the deposition of dielectric films in semiconductor devices, including thin films for insulation, passivation, and etching stop layers. PECVD films play a crucial role in the fabrication of integrated circuits and microelectronics.
2. Solar Panels: PECVD is used to deposit thin layers of material in solar cell production, particularly in the manufacture of thin-film solar panels, where low-temperature processing is required.
3. Optical Coatings: PECVD is employed in the deposition of optical coatings for applications like antireflection coatings, mirror coatings, and coatings for display technologies. The precise control over film properties helps in achieving the desired optical characteristics.
4. Protective Coatings: In the automotive and aerospace industries, PECVD is used for the deposition of hard, protective coatings on metal and plastic parts to improve wear resistance, reduce friction, and enhance durability.
5. Flat Panel Displays: PECVD is used in the production of thin-film transistor (TFT) displays, which are the backbone of modern flat-panel televisions, monitors, and smartphones.

Advantages of PECVD:

• It provides high-quality thin films with precise control over material properties.
• The process is highly versatile and can deposit a wide range of materials.
• PECVD allows for low-temperature deposition, which is beneficial for temperature-sensitive substrates.
• It is a scalable and cost-effective solution for many high-tech industries, making it suitable for mass production of semiconductors, solar cells, and optical devices.

Technical Parameters:

Product Model	KS-PECVD-300
Power supply	220V single phase 50±0.5 Hz or as customized
Power rate	less than 4Kw
Ambient temperature	10ºC~35ºC
Water supply	water pressure 0.2Mpa~0.4Mpa, water temperature 15 ºC ~ 25 ºC
Vacuum chamber size	Ø300×300mm
The ultimate vacuum degree	8.0×10^-5Pa (with optional molecular pump after baking and degassing)
vacuum leak detection rate	≤5.0x10-7Pa.l/S
The maximum heating temperature of the sample	500°C
The temperature control accuracy	±1°C
Spray head size	Φ90mm
RF power supply	frequency 13.56MHz, maximum power 300W automatic matching;
Gas type	2 way with 100 SCCM controller or as customized