Lab-Scale Compact Bridgman and CZ Crystal Growth Furnace for Semiconductor Research

• Customization: Available
• After-sales Service: on Site Installation and Online Support
• Warranty: 12 Months
• Model NO.: KS--CGF-1200X-SCB
• Application: Industry, School, Hospital, Lab
• Customized: Customized
• Structure: Desktop
• Material: Aluminum
• Type: Tubular Furnace
• Heating Zone: 2 Zone
• Transport Package: Wooden Package
• Specification: 25*20*25mm
• Trademark: kunsheng
• Origin: Luoyang City, Henan
• HS Code: 8486109000
• Production Capacity: 500 Sets Per Year

Product Description

Product Description:
KS--CGF-1200X-SCB is a highly integrated and compact crystal growth furnace designed to support both Czochralski (CZ) and Bridgman methods for the development of high-purity single crystals. This versatile system is tailored for research institutions, materials laboratories, and universities working on semiconductor, optical, and functional crystalline materials. With its modular structure and precise control, the KS--CGF-1200X-SCB is ideal for small-scale production, prototype testing, and academic investigation.
At the core of the KS--CGF-1200X-SCB is a dual-zone vertical tube furnace built to provide a stable and uniform thermal environment for directional solidification processes. The temperature zones are independently controlled to generate a well-defined thermal gradient, which is crucial for maintaining crystal quality and uniform growth rates. The furnace chamber accommodates a high-purity quartz tube sealed with flanges that support vacuum or inert gas atmospheres, making the system compatible with air-sensitive materials and contamination-sensitive processes.

The pulling mechanism integrated into the KS--CGF-1200X-SCB offers precision movement of the seed crystal or crucible using a high-accuracy servo motor. Pulling speed and rotation speed are both finely adjustable, allowing researchers to control nucleation and crystal orientation with high repeatability. Whether pulling crystals upward from a melt in CZ mode or lowering a crucible downward through a gradient in Bridgman configuration, this model enables highly controlled operations across various experimental setups.
This furnace is designed for user convenience and laboratory compatibility. The compact footprint allows it to be installed on standard lab benches or floor-mounted frames. The intuitive digital control panel provides access to temperature profiling, ramp-and-soak programming, and real-time monitoring. Users can visualize and control the entire growth process through a touchscreen interface, including crystal pulling speed, rotation, and temperature zones. Optional software integration via RS485 allows for remote control and data logging, streamlining experiment reproducibility and reporting.
The KS--CGF-1200X-SCB supports a wide range of applications. In CZ operation, it can grow single crystals by slowly pulling a seed from a molten charge, enabling the formation of large, oriented crystals used in semiconductors and optics. In Bridgman mode, the crucible can be lowered through a thermal gradient to solidify from bottom to top, ideal for encapsulated materials or directional solidification experiments. The flexibility between upward and downward growth makes this system especially valuable for material development and academic studies involving diverse crystal systems.
To enhance functionality, the system can be configured with optional components including a mechanical vacuum pump, a recirculating gas purification system, and a closed-loop water chiller for thermal management. These accessories support high-temperature operations while maintaining sample purity and protecting the mechanical components. Additionally, the design allows for easy access and quick replacement of tubes, crucibles, or rods, facilitating efficient transitions between experiments.
The KS--CGF-1200X-SCB reflects a practical fusion of precision engineering and user-centered design. Its ability to switch between CZ and Bridgman modes, along with detailed control over pulling mechanics, makes it a preferred choice for crystal growth research involving silicon, germanium, oxides, and other advanced materials. Whether deployed in academic laboratories, national research centers, or advanced material start-ups, this furnace provides a reliable and high-performance solution for single-crystal growth challenges.
Technical Parameters:

Model	KS--CGF-1200X-SCB
Voltage	110V or 208-240VAC, single phase, 50/60Hz
Furnace Power	1.5 kW @ 110VAC, 2.3 kW @ 208-240VAC
Vacuum Pump Power	400W
Water Chiller Power	620W (optional)
Heating Structure	Double-layer steel with air cooling
Heating Zones	Two-zone with 100 mm L each (200 mm total)
Max Working Temperature	1100°C
Temperature Gradient	~100°C/cm within 60 mm
Temperature Control Accuracy	±0.1°C
Tube Type	2" quartz tube with rotation and pulling mechanism
Quartz Tube Size	50 mm OD x 44 mm ID x 600 mm L
Top Flange	Water-cooled with needle valve and KF25 port
Bottom Flange	Needle valve with KF25 port to vacuum
Gas Fittings	Two 1/4" tubes for circulation or flow
Pulling Speed	0.5 - 50 mm/h
Rotation Speed	0.1 - 23 RPM
Travel Distance	0 - 300 mm
Fast Speed Option	35 mm/min
Pulling Drive	Precision servo motor
CZ Rod	300 mm length alumina tube
Seed Mounting Rod	Tool steel, supports up to 800°C
Seed Crystal Diameter	0.5 - 3.2 mm
Alumina Crucible Size	25 OD x 20 ID x 25 H mm
Temperature Controller	Two Eurotherm controllers with ±0.1°C accuracy
Control Features	28-segment programmable PID, RS485, remote iTools
Vacuum Level	10E-2 torr (mechanical), 10E-5 torr (turbopump)
Gas Purification	Optional system (H2O, O2 < 1 ppm)
Water Chiller	Optional, 620W recommended