Multi-Zone Controlled (plasma enhanced) Pecvd Furnace for Uniform Film Growth

• Customization: Available
• After-sales Service: on Site Installation and Online Support
• Warranty: 12 Months
• Model NO.: KS-PECVD1200-60
• Application: Industry, School, Lab
• Customized: Customized
• Structure: Vertical
• Material: Stainless Steel
• Transport Package: Wooden Package
• Specification: 60*200mm
• Trademark: kunsheng
• Origin: Luoyang City, Henan
• HS Code: 8486202100
• Production Capacity: 500 Sets Per Year

Product Description

Plasma Enhanced Chemical Vapor Deposition (PECVD) System
This Plasma Enhanced Chemical Vapor Deposition (PECVD) system is designed for the deposition of thin films at relatively low substrate temperatures, making it ideal for temperature-sensitive substrates and complex layer structures. The equipment utilizes plasma to enhance the chemical reaction rates of precursor gases, allowing for high-quality film growth with improved adhesion, uniformity, and step coverage.
The system typically features a horizontal furnace chamber with precision temperature controllers, a high-vacuum pumping system, and a robust gas delivery module for reactive gases such as silane (SiH₄), ammonia (NH₃), and methane (CH₄). Integrated RF power supply and matching network ensure stable plasma generation within the reaction chamber. The front panel includes multiple digital temperature controllers for independent zone heating, a pressure gauge, and gas flow meters or mass flow controllers for accurate gas regulation.

Key Features:

• Uniform multi-zone heating for controlled deposition conditions
• High-purity quartz tube or stainless steel chamber design
• RF plasma source for enhanced reaction kinetics at lower temperatures
• Integrated vacuum and gas flow systems with digital controls
• Compatible with various precursor gases for different film types (e.g., SiO₂, Si₃N₄, DLC)

Applications:
PECVD is widely used in the fabrication of microelectronic devices, MEMS, solar cells, optical coatings, and barrier layers. It enables the deposition of dielectric films, passivation layers, and encapsulation coatings essential for advanced electronic and photonic device performance.
This system is an essential tool for research laboratories and production environments focused on thin film technology, providing flexibility, control, and reliability in material synthesis and surface engineering.

Technical Parameters:

Tube furnace	Product model	KS-PECVD1200-60
	Max. temperature	1200°C
	Working temperature	≤1100°C
	Tube material	Quartz tube
	Tube size	Diameter 60mm, heating zone length 200mm
	Voltage	220V/50Hz/6KW
	Heating element	Resistance wire
	Thermocouple	K type
	Temperature accuracy	±1°C
	Heating rate	≤10°C/min
	Temperature control	PID control and self-tuning adjustment, intelligent 30-segment programmable control, with over-temperature and break-off alarm function
Gas flow meter	Flow channels	Three-way gas flow system
	Mass flow meter	High-precision digital display type
	Flow range	0-500 SCCM, error ≤0.02%
	Outlet vacuum gauge	Built-in gas mixing system
	Valve	Stainless steel needle valve meter, standard double ferrule joint
RF generator	Output power	5-500W ±1°C
	RF frequency	13.56 MHz ±0.005%
	Reflected power	Up to 100W
	Matching	Automatic
	RF interface	50Ω, N-type
	Cooling	Air cooling
	Power supply	AC 208-240V, 50/60Hz
Vacuum pump	Pump type	High vacuum molecular pump + diffusion pump unit
	Vacuum degree	10^-1Pa to 10^-3Pa
	Connection	KF25 quick connect
	Components	Stainless steel bellows, manual flapper valve, flange, vacuum pump